EL516

EL516 - Analog CMOS IC design
The course comprises the following topics :
Introduction to Analog Design: Why CMOS?, levels of abstraction, robust analog design; Basic MOS Device Physics: MOS Capacitor, charge-sheet model, threshold-voltage, MOS I/V Characteristics, MOS transistor in triode region, pinch-off, saturation, MOSFET as a switch and as amplifier; second-order effects: body-effect, channel-length modulation, sub-threshold conduction; MOS Device Models, MOS capacitances, small-signal model; EKV Equation; Single-Stage Amplifiers: Trade-offs involved in analog design, common-source stage, Common-source stage with resistive and diode-connected, current-source and triode loads, common-source stage with source-degeneration; source-follower stage; common-gate stage, cascode-stage, folded-cascode stage ; Differential Amplifiers: single-ended vs. differential operation of circuits; Differential-pairs; Common-mode response, Differential pair with MOS loads, Gilbert cell and multiplier; Passive and Active Current Mirrors: passive and active current mirrors, cascode current mirror, Wilson current mirror, high-swing current mirror, “trickle” bias, active load, differential-pair with active load, common-mode response; Frequency Response of Amplifiers: Miller effect, poles and zeroes and their response with circuit configuration, frequency-response in common-source stage, source-follower stage, common-gate stage and cascade stages; differential pairs: mirror-poles, zero-value time-constant method; Feedback: basic feedback configurations, loading effect.
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